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Synthetic Sapphire - EES Synthetic sapphire products manufacturer

EES Engineering are now working with synthetic sapphire for the medical industry. Tough, long lasting material now being worked by EES Engineering

Synthetically produced Sapphire. Single crystal Sapphire has a high thermal conductivity, volume resistivity, hardness and wear resistance, as well as a high upper use temperature. The energy band gap is large (10eV). Sapphire is a transparent material having useful transmission of wavelengths in the range 0.2 to 5.5 microns. It is much stronger than glass and can be used as viewing windows in high pressure and vacuum applications.

  • Used in high-power, high-frequency CMOS integrated circuits.
  • Used for high-power radio-frequency (RF) applications such as those found in mobile phones, police radios, and satellite communication systems
  • Used in new generation phones using synthetic sapphire
  • sapphire has a quite low conductivity for electricity, but a much-higher conductivity for heat.
  • Good electrical insulation conducting away great heat from circuits.
  • Sapphire is cut to wafers, wafers of single-crystal sapphire material are also used in the semiconductor industry as a non-conducting substrate
  • The use of the sapphire material significantly reduces the cost as less germanium in compound.


    Chemical Resistance

    Acids - concentrated Good
    Acids - dilute Good
    Alkalis Good
    Halogens Good
    Metals Good

    Electrical Properties

    Dielectric constant 7.5-11.5
    Dielectric strength ( kV mm-1 ) 15-50
    Volume resistivity @25C ( Ohmcm ) >1014
    Mechanical Properties
    Compressive strength ( MPa ) 2100
    Hardness - Knoop ( kgf mm-2 ) 2000
    Hardness - Vickers ( kgf mm-2 ) 1600-1800
    Tensile modulus ( GPa ) 350-390

    Physical Properties


    Apparent porosity ( % ) 0
    Density ( g cm-3 ) 3.985
    Refractive index 1.71-1.79
    Useful optical transmission range 200-5500nm
    Water absorption - saturation ( % ) 0

    Thermal Properties


    Coefficient of thermal expansion @20-1000C ( x10-6 K-1 ) 5.8
    Melting point ( C ) 2050
    Specific heat @25C ( J K-1 kg-1 ) 750
    Thermal conductivity @20C ( W m-1 K-1 ) 35-40
    Upper continuous use temperature ( C ) 1800-1950
    Properties for Sapphire Monofilament

    Property Value

    Filament diameter 0.11mm
    Density g cm-3 3.97
    Melting point C 2050
    Orientation <0001>
    Tensile modulus GPa 410
    Tensile strength GPa 2.1-3.4

Find out more by calling us on 01444 244733

Contact EES

Tel: 01444 244733
Fax: 01444 236939
EES Engineering
Marchants Way
Burgess Hill
West Sussex
RH15 8QY

contact@ees-engineering.co.uk
 




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